Cited 1 time in
Structural and electrical properties of semiconducting YBa2Cu3O6+x thin film by sol-gel for uncooled infrared detectors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Tae-Ho | - |
| dc.contributor.author | Lee, Sung-Gap | - |
| dc.contributor.author | Jeong, Jae-Woon | - |
| dc.date.accessioned | 2022-12-26T21:48:02Z | - |
| dc.date.available | 2022-12-26T21:48:02Z | - |
| dc.date.issued | 2015-04 | - |
| dc.identifier.issn | 1229-9162 | - |
| dc.identifier.issn | 2672-152X | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/17341 | - |
| dc.description.abstract | Uncooled pyroelectric infrared detectors based on semiconducting YBa2Cu3O6+x (YBCO) thin films were investigated. YBCO precursor solutions were prepared using the sol-gel method and YBCO films were fabricated by spin coating. The structural and electrical properties at varying annealing temperatures were studied. From differential thermal analysis and thermogravimetry (DTA-TG) results, an endothermic peak was observed at around 700 degrees C, due to the formation of a tetragonal phase. The crystal structure of the YBCO film annealed at 600 degrees C similar to 800 degrees C was a polycrystalline tetragonal phase. All specimens displayed a second phase (BaCO3). The YBCO film sintered at 700 degrees C showed a small grain size and smooth surface. The temperature resistance coefficient (TCR), responsivity and detectivity of the YBCO film sintered at 700 degrees C were -2.76%/degrees C at room temperature, 36.17V/W and 4.77 x 10(6) cmHz1/2W(-1), respectively. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
| dc.title | Structural and electrical properties of semiconducting YBa2Cu3O6+x thin film by sol-gel for uncooled infrared detectors | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.scopusid | 2-s2.0-84940024741 | - |
| dc.identifier.wosid | 000354777600002 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.16, no.2, pp 188 - 192 | - |
| dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
| dc.citation.volume | 16 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 188 | - |
| dc.citation.endPage | 192 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002328116 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordAuthor | Thin films | - |
| dc.subject.keywordAuthor | Sol-gel growth | - |
| dc.subject.keywordAuthor | Electrical properties | - |
| dc.subject.keywordAuthor | Electron microscopy(SEM) | - |
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