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Microstructural evaluation and failure analysis of Ag wire bonded to Al pads

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dc.contributor.authorChoi, Mi-Ri-
dc.contributor.authorKim, Hyung-Giun-
dc.contributor.authorLee, Taeg-Woo-
dc.contributor.authorJeon, Young-Jun-
dc.contributor.authorAhn, Yong-Keun-
dc.contributor.authorKoo, Kyo-Wang-
dc.contributor.authorJang, You-Cheol-
dc.contributor.authorPark, So-Yeon-
dc.contributor.authorYee, Jae-Hak-
dc.contributor.authorCho, Nam-Kwon-
dc.contributor.authorKang, Il-Tae-
dc.contributor.authorKim, Sangshik-
dc.contributor.authorHan, Seung-Zeon-
dc.contributor.authorLim, Sung-Hwan-
dc.date.accessioned2022-12-26T21:25:48Z-
dc.date.available2022-12-26T21:25:48Z-
dc.date.issued2015-11-
dc.identifier.issn0026-2714-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/16932-
dc.description.abstractWe found the failure mechanisms in Ag wire bonded to Al pads during the high-temperature-storage lifetime test (HTST) and the unbiased highly-accelerated temperature and humidity storage test (uHAST). The native oxide layer on the Al pads caused a ball lift The moisture and the thermal energy during uHAST along with the Cl- ion in epoxy molding compounds (EMCs) induced repetitive oxidation and reduction reactions of the Ag-Al intermetallic compounds (IMCs) with the Al pads. These repetitive reactions formed H-2 gas as a by-product causing the formation of a micro-crack. In addition, the alumina layer acted as a resistive layer in the Ag-Al IMCs. The phases of the Ag-Al IMCs were identified as Ag2Al and Ag3Al, and the growth rates of those IMCs were measured at 150 and 175 degrees C for 2000 h. (C) 2015 Elsevier Ltd. All rights reserved.-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleMicrostructural evaluation and failure analysis of Ag wire bonded to Al pads-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1016/j.microrel.2015.07.038-
dc.identifier.scopusid2-s2.0-84937875381-
dc.identifier.wosid000367282100022-
dc.identifier.bibliographicCitationMICROELECTRONICS RELIABILITY, v.55, no.11, pp 2306 - 2315-
dc.citation.titleMICROELECTRONICS RELIABILITY-
dc.citation.volume55-
dc.citation.number11-
dc.citation.startPage2306-
dc.citation.endPage2315-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHERMODYNAMIC PROPERTIES-
dc.subject.keywordPlusINTERMETALLICS-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordAuthorSilver wire bonding-
dc.subject.keywordAuthorFailure mechanism-
dc.subject.keywordAuthorInterfacial microstructure-
dc.subject.keywordAuthorIntermetallic compound-
dc.subject.keywordAuthorTransmission electron microscopy-
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