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Maintaining effective mobility and enhancing reliability by using a blend system in solution-processed organic field-effect transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Sung-Jong | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.contributor.author | Kim, Se Hyun | - |
| dc.contributor.author | An, Tae Kyu | - |
| dc.date.accessioned | 2022-12-26T20:06:09Z | - |
| dc.date.available | 2022-12-26T20:06:09Z | - |
| dc.date.issued | 2016-06 | - |
| dc.identifier.issn | 0577-9073 | - |
| dc.identifier.issn | 2309-9097 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/15448 | - |
| dc.description.abstract | Blends consisting of small-molecule and polymeric organic semiconductors have recently shown great promise for OFETs due to their high charge carrier mobility values, ease of solution processing and device performance uniformity. In this study, incorporating di-TES ADT into the active layer of a CDT-BTZ OFET was observed to enhance the field-effect mobility and reliability. Moreover, the specific CDT-BTZ concentration affected the mobility and reliability. A mobility value of nearly 0.52 cm(2)/V.s was achieved for 5:1 blends of CDT-BTZ: diF-TES ADT. In addition, the uniformity was improved by a factor of 5-10 when using both the small molecule and polymer together. (C) 2016 The Physical Society of the Republic of China (Taiwan). Published by Elsevier B.V. All rights reserved. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Zhonghua Minguo Wuli Xuehui | - |
| dc.title | Maintaining effective mobility and enhancing reliability by using a blend system in solution-processed organic field-effect transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.cjph.2016.04.018 | - |
| dc.identifier.scopusid | 2-s2.0-84975706650 | - |
| dc.identifier.wosid | 000384737200004 | - |
| dc.identifier.bibliographicCitation | Chinese Journal of Physics, v.54, no.3, pp 347 - 351 | - |
| dc.citation.title | Chinese Journal of Physics | - |
| dc.citation.volume | 54 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 347 | - |
| dc.citation.endPage | 351 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordPlus | SOLVENT | - |
| dc.subject.keywordAuthor | Organic field-effect transistor ( OFET) | - |
| dc.subject.keywordAuthor | Organic semiconductor | - |
| dc.subject.keywordAuthor | Reproducibility | - |
| dc.subject.keywordAuthor | Blend system | - |
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