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Vapor-Phase-Gating-Induced Ultrasensitive Ion Detection in Graphene and Single-Walled Carbon Nanotube Networks

Authors
Hao, JiLi, BoJung, Hyun YoungLiu, FangzeHong, SanghyunJung, Yung JoonKar, Swastik
Issue Date
20-Jun-2017
Publisher
WILEY-V C H VERLAG GMBH
Keywords
carbon nanotubes; gating; graphene; ion detection; radiation sensors
Citation
ADVANCED MATERIALS, v.29, no.23
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
29
Number
23
URI
https://scholarworks.bwise.kr/gnu/handle/sw.gnu/13658
DOI
10.1002/adma.201606883
ISSN
0935-9648
Abstract
Designing ultrasensitive detectors often requires complex architectures, high-voltage operations, and sophisticated low-noise measurements. In this work, it is shown that simple low-bias two-terminal DC-conductance values of graphene and single-walled carbon nanotubes are extremely sensitive to ionized gas molecules. Incident ions form an electrode-free, dielectric-or electrolyte-free, bias-free vapor-phase top-gate that can efficiently modulate carrier densities up to approximate to 0.6 x 10(13) cm(-2). Surprisingly, the resulting current changes are several orders of magnitude larger than that expected from conventional electrostatic gating, suggesting the possible role of a current-gain inducing mechanism similar to those seen in photodetectors. These miniature detectors demonstrate charge-current amplification factor values exceeding 10(8) A C-1 in vacuum with undiminished responses in open air, and clearly distinguish between positive and negative ions sources. At extremely low rates of ion incidence, detector currents show stepwise changes with time, and calculations suggest that these stepwise changes can result from arrival of individual ions. These sensitive ion detectors are used to demonstrate a proof-of-concept low-cost, amplifier-free, light-emitting-diode-based low-power ion-indicator.
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