Patterned Si Film Electrode Fabricated on Shape Memory Alloy
- Authors
- Im, Yeon-Min; Noh, Jung-Pil; Kim, Min-Su; Nam, Tae-Hyun; Cho, Gyu-Bong
- Issue Date
- Nov-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Shape Memory Alloy; Patterning; Silicon; Thin Film
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp 8163 - 8168
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 11
- Start Page
- 8163
- End Page
- 8168
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/13406
- DOI
- 10.1166/jnn.2017.15102
- ISSN
- 1533-4880
1533-4899
- Abstract
- A patterned Si film electrode with lozenge-shaped tiles was fabricated on a Ti-50.5Ni current collector by masking with an expanded metal foil and its electrochemical properties were compared with those of a continuous Si film electrode. Prior to Si film deposition, structural and mechanical properties of the Ti Ni current collector were investigated by means of DSC, XRD and tensile test. The Ti Ni current collector was composed of austenitic (B2) phase which can leads to the stress induced martensitic transformation at room temperature. The patterned Si film electrode yielded high initial efficiency of 83.4% and good capacity retention of 72.3%, and the enhanced structural stability compared to those of continuous Si film electrode, indicating that the application of patterning process is a promising approach to improve electrochemical properties of Si film electrode.
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