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Cited 35 time in webofscience Cited 36 time in scopus
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All-Small-Molecule Solar Cells Incorporating NDI-Based Acceptors: Synthesis and Full Characterization

Authors
Hong, JisuHa, Yeon HeeCha, HyojungKim, RanKim, Yu JinPark, Chan EonDurrant, James R.Kwon, Soon-KiAn, Tae KyuKim, Yun-Hi
Issue Date
Dec-2017
Publisher
American Chemical Society
Keywords
all-small-molecule solar cell; nonfullerene acceptor; NDI-based small molecule; bulk heterojunction morphology; charge-transfer dynamics
Citation
ACS Applied Materials & Interfaces, v.9, no.51, pp 44667 - 44677
Pages
11
Indexed
SCI
SCIE
SCOPUS
Journal Title
ACS Applied Materials & Interfaces
Volume
9
Number
51
Start Page
44667
End Page
44677
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/13268
DOI
10.1021/acsami.7b16004
ISSN
1944-8244
1944-8252
Abstract
A series of naphthalene diimide (NDI)-based small molecules were synthesized as nonfullerene acceptors and incorporated in all-small-molecule solar cells. Three NDI-based small molecules, NDICN-T, NDICN-BT, and NDICN-TVT, were designed with different linkers between two NDI units to induce the different conjugation length and modulate the geometric structures of the NDI dimers. The small NDI-based dimer electron acceptors with slip-stacked structures that facilitate pi-pi stacking interactions and/or hinder excessive aggregation exhibited different morphological behaviors, such as miscibility or crystallinity in bulk heterojunction blends with 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-bldithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bi-thiophen]-5-y1)benzo[c][1,2,5]thiadiazole) (DTS-F) electron donors. The photovoltaic devices prepared with NDICN-TVT gave the highest power conversion efficiency (PCE) of 3.01%, with an open-circuit voltage (V-oc) of 0.75 V, a short-circuit current density (J(sc)) of 7.10 mA cm(-2), and a fill factor of 56.2%, whereas the DTS-F:NDICN-T and DTS-F:NDICN-BT devices provided PCEs of 1.81 and 0.13%, respectively. Studies of the charge-generation properties, charge-transfer dynamics, and charge-transport properties for understanding the structure-property relations revealed that DTS-F:NDICN-TVT blend films with well developed domains and well-ordered crystalline structures performed well, whereas an excessive miscibility between DTS-F and NDICN-BT disrupted the crystallinity of the material and yielded a poor device performance.
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