Preferential Orientation of Tetrahedral Silicon-Based Hosts in Phosphorescent Organic Light-Emitting Diodes

Abstract

Vacuum-processed diphenylbis(3-(pyridine-2-yl)phenyl)silane (2PTPS), diphenylbis(3-(pyridine-3-yl)phenyl)silane (3PTPS), and diphenylbis(3-(pyridine-4-yl)phenyl)silane (4PTPS) have been used as electron-transporting host materials combined with tris(4-carbazoyl-9-ylphenyl)amine (TCTA) as the hole-transporting host, which induce balanced charge carrier transport for high-efficiency phosphorescent organic light-emitting diodes. The 4PTPS-based organic light-emitting diodes with tris[2-phenylpyridinato-C-2,N]iridium(III) [Ir(ppy)(3)] dopant showed highest current efficiency and external quantum efficiency of 53.54 cd/A and 15.61%, compared to 2PTPS (40.75 cd/A, 11.84%) and 3PTPS (29.35 cd/A, 8.54%). These results were attributed to the well-aligned structure with preferential horizontal orientation of the emitting material layer by the diffraction intensity distribution as a function of azimuthal angle in two-dimensional grazing incidence X-ray diffraction analysis. The molecular orientation of TCTA:4PTPS material with a narrow azimuthal intensity distribution had better priority to the horizontal direction than the other TCTA:2PTPS and TCTA:3PTPS materials, which is related to the charge transport as well as the device efficiency. We found that the preferential horizontal orientation of the co-host material with a balanced charge carrier was not affected by Ir(ppy)(3) dopant with a homoleptic structure and bis-[2-(4,6-difluorophenyl)pyridinato-N,C-2](picolinato)iridium [Firpic] dopant with a heteroleptic structure in the co-host/dopant system.