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Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy

Noh, J. P.; Cho, G. B.; Jung, D. W.; Otsuka, N.; Nam, T. H.; Kim, K. W.

ArticleIssue Date2010CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.503, no.1, pp 71 - 75PublisherELSEVIER SCIENCE SA

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Browsing by Otsuka, N.Author

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